S. K. Mohapatra
S. K. Mohapatra
Assistant Professor
He received his B.E. from Utkal University, M.E. in Communication Control and Networking from MITS, Gwalior, in 1994 and 2003 respectively. He obtained Ph.D. from National Institute of Technology, Rourkela, in the year 2016. Currently he is working as Assistant Professor, in School of Electronics Engineering, Kalinga Institute of Industrial Technology, Bhubaneswar from 20th June 2016. He have more than 19 years of teaching experience. He had a teaching and administrative experience as an Assistance Professor and Head of the Department of ETC from Mar. 2001 to Jun. 2011 at A.B.I.T., Cuttack. Explore, share and learn interesting research opportunities on Nano-electronics devices, Sensors for Communication and RF Transceivers with application towards IoT in which my contributions will make a difference to the quality of life of real people.His research interests include Modeling and Simulation of Nanoscale Devices and its application in IoT. Energy efficient Wireless Sensor Networking, Adhoc Networks, Cellular Communications, Metamaterial absorbers in THz application, UWB-MIMO Antenna, Reconfigurable Antenna, Performance enhancement for high frequency applications.
He has extensively contributed as author and co-author in several national and international journals and conferences of repute. He has been a part of committee member of various international conferences, Editorial Board Member and Reviewer of many international journals.
Profile Links
Email :
[email protected]
Scopus Id :
55642401000
Google Scholar :
https://scholar.google.co.in/citations?user=cpkqjLoAAAAJ&hl=en&authuser=1
Social Links
Educational Qualification
PhD
Research Interests
Nanoscale Devices, Communication Systems, Networking, RF Applications
Administrative Responsibility
EXAMINATION FIC
Memberships
He is a Life Member of ISTE, IETE, CSI, OITS and Senior Member of IEEE.
Outreach Activity
https://www.researchgate.net/profile/S_K_Mohapatra
PhD
Research Interests
Nanoscale Devices, Communication Systems, Networking, RF Applications
Administrative Responsibility
EXAMINATION FIC
Memberships
He is a Life Member of ISTE, IETE, CSI, OITS and Senior Member of IEEE.
Outreach Activity
https://www.researchgate.net/profile/S_K_Mohapatra
Journals/Conferences :
T.M. Behera, S.K. Mohapatra, U.C. Samal, M.S. Khan, M. Daneshmand and A.H. Gandomi,. “I-SEP: An Improved Routing Protocol for Heterogeneous WSN for IoT based Environmental Monitoring.”. IEEE Internet of Things Journal,DOI: 10.1109/JIOT.2019.2940988,, Vol. 6, no. 1, pp. 710-717, Jan ,2020. (IEEE)
A.Pattnaik, Sruti S. Singh, and S. K. Mohapatra, “Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET." Journal of Nano-and Electronic Physics, 11, no. 6,pp. 1-7, 2019. (Scopus).
D.Dutta, A. Pradhan, O.P. Acharya, and S. K. Mohapatra, “IoT based pollution monitoring and health correlation: a case study on smart city”. International Journal of System Assurance Engineering and Management, 10(4), pp.731-738, 2019.(Scopus)Springer.
A.Pattnaik, Sruti S. Singh, and S. K. Mohapatra, “Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET." Journal of Nano-and Electronic Physics, 11, no. 6,pp. 1-7, 2019. (Scopus).
D.Dutta, A. Pradhan, O.P. Acharya, and S. K. Mohapatra, “IoT based pollution monitoring and health correlation: a case study on smart city”. International Journal of System Assurance Engineering and Management, 10(4), pp.731-738, 2019.(Scopus)Springer.
A.Sahu, R.Goswami, S. K. Mohapatra. “Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation”. Silicon,2019. (Scopus/SCI)Springer.
T.M. Behera, S.K. Mohapatra, U.C. Samal, M.S. Khan, “Hybrid heterogeneous routing scheme for improved network performance in WSNs for animal tracking”. Internet of Things, Vol. 6, pp. 100047,June ,2019. (Elsevier)
T.M.Behera, S.K. Mohapatra, U.C.Samal, M.S.Khan, M.Daneshmand and A.H.Gandomi,.“Residual Energy Based Cluster-head Selection in WSNs for IoT Application”. IEEE Internet of Things Journal,Vol. 6, pp. 5132 - 5139,2019.(IEEE)
A.Mohanty, O. P. Acharya, B. Appasani, and S. K. Mohapatra. "A multi-band terahertz metamaterial absorber based on a Π and U-shaped structure." Photonics and Nanostructures-Fundamentals and Applications, Vol. 32, pp. 74-80, 2018. (Elsevier).
T. M. Behera, S. K. Mohapatra, andU. C. Samal, “SNRP: Sub-netting based routing protocol for improved network performance in WSN”, International Journal of Advanced Science and Technology,Vol. 121, pp. 31-42, 2018. (SERSC)
S.Mishra, A. Dastidar, U.C.Samal, and S. K. Mohapatra, “Review of different image data hiding techniques”, International Journal of Advanced Science and Technology,Vol. 121, pp. 43-54, 2018. (SERSC)
A Pattnaik, S. K. Mohapatra, “Study of Silicon Body Thickness and Channel Length on SCEs and Electrical Performances of Underlapped GS-DG-MOSFET”, International Journal of Advanced Science and Technology,Vol. 115, pp. 113-124, 2018. (SERSC)(http://dx.doi.org/10.14257/ ijast.2018.115.11)
T. M. Behera, U. C. Samal, and S. K. Mohapatra, "Energy Efficient Modified LEACH Protocol for IoT Application." IET Wireless Sensor Systems, 2018.(IET)( 10.1049/iet-wss.2017.0099)
ShasankaSekhar Rout, S. K. Mohapatra, and KabirajSethi. "Design of Cascode Mixer Based on Bulk Injection and Switched Biasing Techniques in 180 nm CMOS Process for a High Performance Receiver Front End." Journal of Low Power Electronics Vol. 14, no. 1, pp. 49-56, 2018.(American Scientific Publisher)
B Vandana,B. S. Patro, J. K. Das,Brajesh Kumar Kaushik and S. K. Mohapatra "Inverted ‘T’Junctionless FinFET (ITJL FinFET): Performance Estimation through Device Geometry Variation." ECS Journal of Solid State Science and Technology Vol.7, No.4: pp. Q52-Q59, 2018.
B Vandana, Jitendra Kumar Das, Sushanta K. Mohapatra, and SumanLataTripathi. "Impact of Channel Engineering (Si1-0.25 Ge0. 25) Technique on gm (Transconductance) and Higher Order Derivatives of 3D Conventional and Wavy Junctionless FinFETs (JLT)." FactaUniversitatis, Series: Electronics and Energetics 31, no. 2 (2018): 257-265.
Trupti M.Behera, Sushanta K. Mohapatra. "Improving Network Lifetime by Minimizing Energy Hole Problem in WSNfor The Application of IoT." FactaUniversitatis, Series: Electronics and Energetics 31, no. 2 (2018): 267-277.
T. M.Behera, S. K. Mohapatra, and O. P. Acharya. "Performance Analysis of Heterogenous WSN for Application in IoT.", Oriental Journal of Computer Science and Technology, Vol.10,No.4, pp.730-735,2017.
B Vandana, S. K. Mohapatra, J. K. Das, and B. S. Patro"Prospects of 2D Junctionless Channel Transistor (JLCT) towards Analog and RF metrics using Si and SiGe in Device layer",Journal of Low Power Electronics, Vol. 13, No 3, pp. 1-9, September 2017.(American Scientific Publisher)
B Vandana, J K Das, B S Patro, S K Mohapatra, "Physical insight of junctionless transistor with simulation study of Strained channel.". ECTI Transactions on Electrical Engineering, Electronics, and Communications, vol. 15, no. 01, pp.1-7, 2017.(ECTI)
B Vandana, J K Das, B S Patro, S K Mohapatra,“Exploration Towards Electrostatic Integrity For SiGe On Insulator (SG-OI) On Junctionless Channel Transistor (JLCT).”,FactaUniversitatis, Series: Electronics and Energetics, vol. 30, no. 3, pp. 383-390. 2017. (FactaUniversitatis)
Shiva Prasad Das, AnanyaDastidar, Partha Sarkar, S. K. Mohapatra, “Mixed Mode Performance of GaAs UTB-MOSFET With Extra Insulator Region And Undoped Buried Oxide Region”,FactaUniversitatis, Series: Electronics and Energetics, vol. 30, no. 3, pp. 375-382. 2017. (FactaUniversitatis)
K. P. Pradhan, P. K. Sahu, D. Singh, L. Artola, and S. K. Mohapatra, “Reliability analysis of charge plasma based double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET”,Superlattices and Microstructures, vol. 85, pp. 149-155, 2015. (Elsevier)
K. P. Pradhan, S. K. Mohapatra, and P. K. Sahu, “Impact of Channel and Metal Gate Work Function on GS-DG MOSFET: A Linearity Analysis”, ECS J. Solid State Sci. Technol., vol. 9, no. 9, pp. 393-397, 2015. (ECS)
K. P. Pradhan, S. K. Mohapatra, P. K. Sahu, “Design Equivalent Scaling on Double Gate FinFET towards Analog & RF FOMs: A TCAD Estimation”,Journal of Low Power Electronics, Vol. 11, no. 3, pp. 316-322, 2015. (American Scientific Publisher)
P. K. Sahu, S. K. Mohapatra, and K. P. Pradhan, “Zero temperature-coefficient bias point over wide range of temperatures for single-and double-gate UTB-SOI n-MOSFETs with trapped charges”,Materials Science in Semiconductor Processing, vol. 31, pp. 175-183, 2015. (Elsevier)
S. K. Mohapatra, K. P. Pradhan, L. Artola, and P. K. Sahu, “Estimation of Analog/RF FOMs using Device Design Engineering in GS-DG-MOSFET”,Materials Science in Semiconductor Processing, vol. 31, pp. 455-462, 2015. (Elsevier)
S. K. Mohapatra, K. P. Pradhan, and P. K. Sahu, “Temperature dependence inflection point in Ultra-Thin Si directly on Insulator (SDOI) MOSFETs: An influence to key performance metrics”,Superlattices and Microstructures, vol. 78, pp. 134-143, 2015. (Elsevier)
K. P. Pradhan, M. R. Kumar, S. K. Mohapatra, P. K. Sahu, “Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA) MOSFET using center potential”,Ain Shams Engineering Journal, vol. 6, pp. 1171-1177, 2015. (Elsevier)
B Jena, K P Pradhan, S Dash, G P Mishra, P K Sahu and S K Mohapatra, “Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime”,Advances in Natural Sciences: Nanoscience and Nanotechnology, vol. 6, pp. 1-4, 2015. (IOP Science)
S K Mohapatra, K P Pradhan, P K Sahu, S Parija. "Impact of Strain on Fully Depleted Strained Gate Stack Double Gate MOSFET: A Simulation Study." ECTI Transactions on Electrical Engineering, Electronics, and Communications, vol.13, no.2 , pp. 54-57, 2015. (ECTI)
B Jena, K P Pradhan, P K Sahu, S Dash, G P Mishra, S K Mohapatra, “Investigation on Cylindrical Gate All Around (GAA) to Nanowire MOSFET for Circuit Application”,FactaUniversitatis, Series: Electronics and Energetics, vol. 28, no. 4, pp. 637-643, 2015. (FactaUniversitatis)
S. K. Mohapatra, K. P. Pradhan, G. S. Pati, and P. K. Sahu, “Relative appraisal of Ultra-Thin Body MOSFETs: An analytical modeling including hot carrier induced degradation,"InformacijeMidem-Journal of Microelectronics Electronic Components and Materials, vol. 45, pp. 57-65, 2015. (MIDEM Society)
S. K. Mohapatra, K. P. Pradhan, P. K. Sahu, “ZTC bias point of advanced fin based device: The importance and exploration”,FactaUniversitatis, Series: Electronics and Energetics, vol. 28, no. 3, 2015. (FactaUniversitatis)
Conferences
TruptiMayeeBehera, Mohammad S Khan, Sushanta Kumar Mohapatra, Umesh Chandra Samail, MdZakirulAlamBhuiyan " 2019 International Conference on Internet of Things (iThings) and IEEE Green Computing and Communications (GreenCom) and IEEE Cyber, Physical and Social Computing (CPSCom) and IEEE Smart Data (SmartData), 14-17 July 2019, pp. 953-958. IEEE, 2019.
ShibamSwarup Das, Ruby Mishra,andS. K. Mohapatra. "Design & Performance Analysis of Low Power 1-bit Full Adder at 90 nm node using PTL Logic." In 2018 Second International Conference on Computing Methodologies and Communication (ICCMC), Feb 15,pp. 636-639. IEEE, 2018.
TruptiMayeeBehera,S. K. Mohapatra, ProshikshyaMukjerjee, and Harish Kumar Sahoo. "Work-In-Progress: DEEC-VD: A Hybrid Energy Utilization Cluster-Based Routing Protocol for WSN for Application in IoT." In 2017 International Conference on Information Technology (ICIT), pp. 97-100. IEEE, 2017.
B Vandana,J K Das,S K Mohapatraand B K Kaushik, “Effectiveness of High Permittivity Spacer for Underlap regions of Wavy-Junctionless FinFET at 22 nm node and Scaling Short Channel Effects”, 21st International Symposium on VLSI Design and Test (VDAT 2017), IIT Roorkee, INDIA, 29th Jun-2nd July, 2017.
S. P.Nayak, P. Dutta, S. K. Mohapatra, "Improvement of transconductance and gate source capacitance of Al0.27Ga0.73N/GaN HEMT at 45nm gate length with In0.1Ga0.9N back-barrier," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, pp. 131-135, 2017.
B Vandana, J K Das,S K Mohapatraand M SumathiJyothi, “Impact on Gate Oxide material of Inverted ‘T’ Junctionless FinFET at 22 nm Technology node”, International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech 2017) , Science City, Kolkata, Apr.28-29, 2017.
PrabhupadaSamal, VeeraVenkataSubrahmanya, Kumar Bhajana, S. K. Mohapatra, “Structural Analysis of 1.1kV 4H-SiC Power DMOSFETs and it’s Susceptibility to high Temperature”, International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech 2017) , Science City, Kolkata, Apr.28-29, 2017.
SoumyaPravaNayak,Pradipta Dutta, S. K. Mohapatra, “Performance Enhancement in Al0.3Ga0.7N/GaN HEMT based inverter using MOSHEMT”, International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech 2017) , Science City, Kolkata, Apr.28-29, 2017.
Vandana B, B S Patro, J K Das, S K Mohapatra, “SiGe on Insulator (SG-OI) on Junctionless Channel Transistor (JLCT): A new device for scaling with improved switching action”, 2nd International Conference on Micro-electronics, Communication and Computation-2016, SanDiego, USA, Sep., 2016.
S. K. Mohanty, S. Sengupta, S. K. Mohapatra, “Test bench automation to overcome verification challenge of SOC Interconnect”,2015 International Conference on Man and Machine Interfacing (MAMI). IEEE, Bhubaneswar, Apr., 2016.
S. K. Mohapatra, K. P. Pradhan, D. Singh, and P. K. Sahu, “The Role of Geometry Parameters and Fin Aspect Ratio of sub-20nm SOI-FinFET: An Analysis towards Analog and RF Circuit Design”, IEEE Transactions on Nanotechnology, vol. 14, no. 3, pp. 546 - 554, 2015. (IEEE)
Books :
B. Vandana, Prashant Parashar, B. S. Patro, K. P. Pradhan, S. K. Mohapatra, and J. K. Das. "Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)." In Advances in Signal Processing and Communication, pp. 573-581. Springer, Singapore, 2019. (ISBN 9811325537, 9789811325533)
T. M. Behera, U. C. Samal, and S. K. Mohapatra, "Routing Protocols." Computational Intelligence in Sensor Networks. Springer, Berlin, Heidelberg, 2019. 79-99.DOI-https://doi.org/10.1007/978-3-662-57277-1_4. Print ISBN-978-3-662-57275-7.
T.M. Behera, S.K. Mohapatra, U.C. Samal, M.S. Khan, M. Daneshmand and A.H. Gandomi,. “I-SEP: An Improved Routing Protocol for Heterogeneous WSN for IoT based Environmental Monitoring.”. IEEE Internet of Things Journal,DOI: 10.1109/JIOT.2019.2940988,, Vol. 6, no. 1, pp. 710-717, Jan ,2020. (IEEE)
A.Pattnaik, Sruti S. Singh, and S. K. Mohapatra, “Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET." Journal of Nano-and Electronic Physics, 11, no. 6,pp. 1-7, 2019. (Scopus).
D.Dutta, A. Pradhan, O.P. Acharya, and S. K. Mohapatra, “IoT based pollution monitoring and health correlation: a case study on smart city”. International Journal of System Assurance Engineering and Management, 10(4), pp.731-738, 2019.(Scopus)Springer.
A.Pattnaik, Sruti S. Singh, and S. K. Mohapatra, “Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET." Journal of Nano-and Electronic Physics, 11, no. 6,pp. 1-7, 2019. (Scopus).
D.Dutta, A. Pradhan, O.P. Acharya, and S. K. Mohapatra, “IoT based pollution monitoring and health correlation: a case study on smart city”. International Journal of System Assurance Engineering and Management, 10(4), pp.731-738, 2019.(Scopus)Springer.
A.Sahu, R.Goswami, S. K. Mohapatra. “Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation”. Silicon,2019. (Scopus/SCI)Springer.
T.M. Behera, S.K. Mohapatra, U.C. Samal, M.S. Khan, “Hybrid heterogeneous routing scheme for improved network performance in WSNs for animal tracking”. Internet of Things, Vol. 6, pp. 100047,June ,2019. (Elsevier)
T.M.Behera, S.K. Mohapatra, U.C.Samal, M.S.Khan, M.Daneshmand and A.H.Gandomi,.“Residual Energy Based Cluster-head Selection in WSNs for IoT Application”. IEEE Internet of Things Journal,Vol. 6, pp. 5132 - 5139,2019.(IEEE)
A.Mohanty, O. P. Acharya, B. Appasani, and S. K. Mohapatra. "A multi-band terahertz metamaterial absorber based on a Π and U-shaped structure." Photonics and Nanostructures-Fundamentals and Applications, Vol. 32, pp. 74-80, 2018. (Elsevier).
T. M. Behera, S. K. Mohapatra, andU. C. Samal, “SNRP: Sub-netting based routing protocol for improved network performance in WSN”, International Journal of Advanced Science and Technology,Vol. 121, pp. 31-42, 2018. (SERSC)
S.Mishra, A. Dastidar, U.C.Samal, and S. K. Mohapatra, “Review of different image data hiding techniques”, International Journal of Advanced Science and Technology,Vol. 121, pp. 43-54, 2018. (SERSC)
A Pattnaik, S. K. Mohapatra, “Study of Silicon Body Thickness and Channel Length on SCEs and Electrical Performances of Underlapped GS-DG-MOSFET”, International Journal of Advanced Science and Technology,Vol. 115, pp. 113-124, 2018. (SERSC)(http://dx.doi.org/10.14257/ ijast.2018.115.11)
T. M. Behera, U. C. Samal, and S. K. Mohapatra, "Energy Efficient Modified LEACH Protocol for IoT Application." IET Wireless Sensor Systems, 2018.(IET)( 10.1049/iet-wss.2017.0099)
ShasankaSekhar Rout, S. K. Mohapatra, and KabirajSethi. "Design of Cascode Mixer Based on Bulk Injection and Switched Biasing Techniques in 180 nm CMOS Process for a High Performance Receiver Front End." Journal of Low Power Electronics Vol. 14, no. 1, pp. 49-56, 2018.(American Scientific Publisher)
B Vandana,B. S. Patro, J. K. Das,Brajesh Kumar Kaushik and S. K. Mohapatra "Inverted ‘T’Junctionless FinFET (ITJL FinFET): Performance Estimation through Device Geometry Variation." ECS Journal of Solid State Science and Technology Vol.7, No.4: pp. Q52-Q59, 2018.
B Vandana, Jitendra Kumar Das, Sushanta K. Mohapatra, and SumanLataTripathi. "Impact of Channel Engineering (Si1-0.25 Ge0. 25) Technique on gm (Transconductance) and Higher Order Derivatives of 3D Conventional and Wavy Junctionless FinFETs (JLT)." FactaUniversitatis, Series: Electronics and Energetics 31, no. 2 (2018): 257-265.
Trupti M.Behera, Sushanta K. Mohapatra. "Improving Network Lifetime by Minimizing Energy Hole Problem in WSNfor The Application of IoT." FactaUniversitatis, Series: Electronics and Energetics 31, no. 2 (2018): 267-277.
T. M.Behera, S. K. Mohapatra, and O. P. Acharya. "Performance Analysis of Heterogenous WSN for Application in IoT.", Oriental Journal of Computer Science and Technology, Vol.10,No.4, pp.730-735,2017.
B Vandana, S. K. Mohapatra, J. K. Das, and B. S. Patro"Prospects of 2D Junctionless Channel Transistor (JLCT) towards Analog and RF metrics using Si and SiGe in Device layer",Journal of Low Power Electronics, Vol. 13, No 3, pp. 1-9, September 2017.(American Scientific Publisher)
B Vandana, J K Das, B S Patro, S K Mohapatra, "Physical insight of junctionless transistor with simulation study of Strained channel.". ECTI Transactions on Electrical Engineering, Electronics, and Communications, vol. 15, no. 01, pp.1-7, 2017.(ECTI)
B Vandana, J K Das, B S Patro, S K Mohapatra,“Exploration Towards Electrostatic Integrity For SiGe On Insulator (SG-OI) On Junctionless Channel Transistor (JLCT).”,FactaUniversitatis, Series: Electronics and Energetics, vol. 30, no. 3, pp. 383-390. 2017. (FactaUniversitatis)
Shiva Prasad Das, AnanyaDastidar, Partha Sarkar, S. K. Mohapatra, “Mixed Mode Performance of GaAs UTB-MOSFET With Extra Insulator Region And Undoped Buried Oxide Region”,FactaUniversitatis, Series: Electronics and Energetics, vol. 30, no. 3, pp. 375-382. 2017. (FactaUniversitatis)
K. P. Pradhan, P. K. Sahu, D. Singh, L. Artola, and S. K. Mohapatra, “Reliability analysis of charge plasma based double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET”,Superlattices and Microstructures, vol. 85, pp. 149-155, 2015. (Elsevier)
K. P. Pradhan, S. K. Mohapatra, and P. K. Sahu, “Impact of Channel and Metal Gate Work Function on GS-DG MOSFET: A Linearity Analysis”, ECS J. Solid State Sci. Technol., vol. 9, no. 9, pp. 393-397, 2015. (ECS)
K. P. Pradhan, S. K. Mohapatra, P. K. Sahu, “Design Equivalent Scaling on Double Gate FinFET towards Analog & RF FOMs: A TCAD Estimation”,Journal of Low Power Electronics, Vol. 11, no. 3, pp. 316-322, 2015. (American Scientific Publisher)
P. K. Sahu, S. K. Mohapatra, and K. P. Pradhan, “Zero temperature-coefficient bias point over wide range of temperatures for single-and double-gate UTB-SOI n-MOSFETs with trapped charges”,Materials Science in Semiconductor Processing, vol. 31, pp. 175-183, 2015. (Elsevier)
S. K. Mohapatra, K. P. Pradhan, L. Artola, and P. K. Sahu, “Estimation of Analog/RF FOMs using Device Design Engineering in GS-DG-MOSFET”,Materials Science in Semiconductor Processing, vol. 31, pp. 455-462, 2015. (Elsevier)
S. K. Mohapatra, K. P. Pradhan, and P. K. Sahu, “Temperature dependence inflection point in Ultra-Thin Si directly on Insulator (SDOI) MOSFETs: An influence to key performance metrics”,Superlattices and Microstructures, vol. 78, pp. 134-143, 2015. (Elsevier)
K. P. Pradhan, M. R. Kumar, S. K. Mohapatra, P. K. Sahu, “Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA) MOSFET using center potential”,Ain Shams Engineering Journal, vol. 6, pp. 1171-1177, 2015. (Elsevier)
B Jena, K P Pradhan, S Dash, G P Mishra, P K Sahu and S K Mohapatra, “Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime”,Advances in Natural Sciences: Nanoscience and Nanotechnology, vol. 6, pp. 1-4, 2015. (IOP Science)
S K Mohapatra, K P Pradhan, P K Sahu, S Parija. "Impact of Strain on Fully Depleted Strained Gate Stack Double Gate MOSFET: A Simulation Study." ECTI Transactions on Electrical Engineering, Electronics, and Communications, vol.13, no.2 , pp. 54-57, 2015. (ECTI)
B Jena, K P Pradhan, P K Sahu, S Dash, G P Mishra, S K Mohapatra, “Investigation on Cylindrical Gate All Around (GAA) to Nanowire MOSFET for Circuit Application”,FactaUniversitatis, Series: Electronics and Energetics, vol. 28, no. 4, pp. 637-643, 2015. (FactaUniversitatis)
S. K. Mohapatra, K. P. Pradhan, G. S. Pati, and P. K. Sahu, “Relative appraisal of Ultra-Thin Body MOSFETs: An analytical modeling including hot carrier induced degradation,"InformacijeMidem-Journal of Microelectronics Electronic Components and Materials, vol. 45, pp. 57-65, 2015. (MIDEM Society)
S. K. Mohapatra, K. P. Pradhan, P. K. Sahu, “ZTC bias point of advanced fin based device: The importance and exploration”,FactaUniversitatis, Series: Electronics and Energetics, vol. 28, no. 3, 2015. (FactaUniversitatis)
Conferences
TruptiMayeeBehera, Mohammad S Khan, Sushanta Kumar Mohapatra, Umesh Chandra Samail, MdZakirulAlamBhuiyan " 2019 International Conference on Internet of Things (iThings) and IEEE Green Computing and Communications (GreenCom) and IEEE Cyber, Physical and Social Computing (CPSCom) and IEEE Smart Data (SmartData), 14-17 July 2019, pp. 953-958. IEEE, 2019.
ShibamSwarup Das, Ruby Mishra,andS. K. Mohapatra. "Design & Performance Analysis of Low Power 1-bit Full Adder at 90 nm node using PTL Logic." In 2018 Second International Conference on Computing Methodologies and Communication (ICCMC), Feb 15,pp. 636-639. IEEE, 2018.
TruptiMayeeBehera,S. K. Mohapatra, ProshikshyaMukjerjee, and Harish Kumar Sahoo. "Work-In-Progress: DEEC-VD: A Hybrid Energy Utilization Cluster-Based Routing Protocol for WSN for Application in IoT." In 2017 International Conference on Information Technology (ICIT), pp. 97-100. IEEE, 2017.
B Vandana,J K Das,S K Mohapatraand B K Kaushik, “Effectiveness of High Permittivity Spacer for Underlap regions of Wavy-Junctionless FinFET at 22 nm node and Scaling Short Channel Effects”, 21st International Symposium on VLSI Design and Test (VDAT 2017), IIT Roorkee, INDIA, 29th Jun-2nd July, 2017.
S. P.Nayak, P. Dutta, S. K. Mohapatra, "Improvement of transconductance and gate source capacitance of Al0.27Ga0.73N/GaN HEMT at 45nm gate length with In0.1Ga0.9N back-barrier," 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, pp. 131-135, 2017.
B Vandana, J K Das,S K Mohapatraand M SumathiJyothi, “Impact on Gate Oxide material of Inverted ‘T’ Junctionless FinFET at 22 nm Technology node”, International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech 2017) , Science City, Kolkata, Apr.28-29, 2017.
PrabhupadaSamal, VeeraVenkataSubrahmanya, Kumar Bhajana, S. K. Mohapatra, “Structural Analysis of 1.1kV 4H-SiC Power DMOSFETs and it’s Susceptibility to high Temperature”, International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech 2017) , Science City, Kolkata, Apr.28-29, 2017.
SoumyaPravaNayak,Pradipta Dutta, S. K. Mohapatra, “Performance Enhancement in Al0.3Ga0.7N/GaN HEMT based inverter using MOSHEMT”, International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech 2017) , Science City, Kolkata, Apr.28-29, 2017.
Vandana B, B S Patro, J K Das, S K Mohapatra, “SiGe on Insulator (SG-OI) on Junctionless Channel Transistor (JLCT): A new device for scaling with improved switching action”, 2nd International Conference on Micro-electronics, Communication and Computation-2016, SanDiego, USA, Sep., 2016.
S. K. Mohanty, S. Sengupta, S. K. Mohapatra, “Test bench automation to overcome verification challenge of SOC Interconnect”,2015 International Conference on Man and Machine Interfacing (MAMI). IEEE, Bhubaneswar, Apr., 2016.
S. K. Mohapatra, K. P. Pradhan, D. Singh, and P. K. Sahu, “The Role of Geometry Parameters and Fin Aspect Ratio of sub-20nm SOI-FinFET: An Analysis towards Analog and RF Circuit Design”, IEEE Transactions on Nanotechnology, vol. 14, no. 3, pp. 546 - 554, 2015. (IEEE)
Books :
B. Vandana, Prashant Parashar, B. S. Patro, K. P. Pradhan, S. K. Mohapatra, and J. K. Das. "Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)." In Advances in Signal Processing and Communication, pp. 573-581. Springer, Singapore, 2019. (ISBN 9811325537, 9789811325533)
T. M. Behera, U. C. Samal, and S. K. Mohapatra, "Routing Protocols." Computational Intelligence in Sensor Networks. Springer, Berlin, Heidelberg, 2019. 79-99.DOI-https://doi.org/10.1007/978-3-662-57277-1_4. Print ISBN-978-3-662-57275-7.