Satya Narayan Mishra
Satya Narayan Mishra
Assistant Professor
Satya Narayan Mishra was born in Odisha, India. He received the B.Tech degree in Electronics & Telecommunication Engineering from B.P.U.T, Odisha in 2007 and M.Tech in Microelectronics & VLSI from NIT Silchar, India in 2013. He has more than 7 years of teaching experience.His Research interest are device Modeling:Group III-Nitride based MOS-HEMT for High Power and High Speed Electronics.
Research Interests
Microelectronics & VLSI
Microelectronics & VLSI
Journals/Conferences :
1. Mishra, Satya Narayan, et al. "Field-Plated AlInN/AlN/GaN MOSHEMT with Improved RF Power Performance." Advances in Signal Processing and Communication. Springer, Singapore, 2019. 611-617.
2. Nishi Tiwari, Suraj Kumar Gupta, S. N. Mishra, "Impact of AlGaN barrier layer on DC and AC characteristics of AlxGa1-xN/GaN MOSHEMT", 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech), 28-29 April 2017,Kolkata.(IEEE Xplore).
3. Suraj Gupta,S.N.Mishra, K.Jena “DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT”, International Conference on Signal Processing,Communication,Power and Embedded System(SCOPES),3-5 Oct. 2016. (IEEE Xplore).
4. K.Jena, B.Bhowmick,S.Baishya, S. N. Mishra, “Length Scaling Effect on 3D Hetero Junction SOI Tunnel FET,” Spvryan’s International Journal of Engineering Sciences & Technology (SEST), vol. 3, Issue. 01, ISSN : 2394-0905, 2015.
5. Biplab Panda, S. K. Dash, S. N. Mishra, “High Slew Rate op-amp design for low power Applications,””, International Conference on Control, Instrumentation, Communication and Computational Technologies (ICCICCT),2014. (IEEE Xplore).
6. S.N.Mishra,Wasim Arif, Jishan Mehedi, Srimanta Baishya “A power efficient 6-bit tiq adc design for portable applications”, IEEE Third International Conference on Consumer Electronics, 22-25 Nov. 2013, Berlin. (IEEE Xplore).
1. Mishra, Satya Narayan, et al. "Field-Plated AlInN/AlN/GaN MOSHEMT with Improved RF Power Performance." Advances in Signal Processing and Communication. Springer, Singapore, 2019. 611-617.
2. Nishi Tiwari, Suraj Kumar Gupta, S. N. Mishra, "Impact of AlGaN barrier layer on DC and AC characteristics of AlxGa1-xN/GaN MOSHEMT", 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech), 28-29 April 2017,Kolkata.(IEEE Xplore).
3. Suraj Gupta,S.N.Mishra, K.Jena “DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT”, International Conference on Signal Processing,Communication,Power and Embedded System(SCOPES),3-5 Oct. 2016. (IEEE Xplore).
4. K.Jena, B.Bhowmick,S.Baishya, S. N. Mishra, “Length Scaling Effect on 3D Hetero Junction SOI Tunnel FET,” Spvryan’s International Journal of Engineering Sciences & Technology (SEST), vol. 3, Issue. 01, ISSN : 2394-0905, 2015.
5. Biplab Panda, S. K. Dash, S. N. Mishra, “High Slew Rate op-amp design for low power Applications,””, International Conference on Control, Instrumentation, Communication and Computational Technologies (ICCICCT),2014. (IEEE Xplore).
6. S.N.Mishra,Wasim Arif, Jishan Mehedi, Srimanta Baishya “A power efficient 6-bit tiq adc design for portable applications”, IEEE Third International Conference on Consumer Electronics, 22-25 Nov. 2013, Berlin. (IEEE Xplore).